Our research group focuses on structural issues of surface and thin film systems.  Principal interests include semiconductor surface structure and thin film growth mechanisms.   Our interest in Group IV semiconductor heterosystems is driven by potential electronic applications that can be inexpensively integrated with the dominant material, silicon. 
    Growth is presently carried out by simple molecular beam epitaxy (MBE).  Gas-source MBE capabilities are being added.  To determine structure, we use x-ray standing waves, x-ray photoemission, x-ray diffraction, and electron diffraction (LEED and soon RHEED).

Research Interests: